Power Electronics (SiC and GaN Devices)

Opportunities with wideband gap devices in power electronics

SiC and GaN power devices can handle much higher power density compared with traditional silicon counterparts, which is opening up advanced applications.

Players in this ecosystem face challenges in adoption of these technologies within their target applications and are seeking opportunities from technical innovations in terms of integration and better performance.

FutureBridge advises clients with technical innovations in wide band gap devices, opportunities by identifying new applications and suppliers offering innovative products to meet the current and future needs.

FutureBridge advises clients with technical innovations in wide band gap devices, opportunities by identifying new applications and suppliers offering innovative products to meet the current and future needs.

Select coverage areas

  • New application identification
  • Developments in GaN on SiC and GaN on GaN Devices
  • Ga2O3, Diamond and AlN power devices
  • Commercialization timelines

 

  • Product Technology Mapping
  • Vendor Business Analysis
  • Global Supply Chain Analysis

Key issues this tech-enabled industry is grappling with today

What are the trends in GaN integration for RF in IoT nodes?

Identification and benchmarking of wide bad gap solutions for Automotive and Aerospace application?

Research and Development work happening in various universities and academia in packaging and product design?

Identification of global players in High Voltage Wideband Gap Power Devices with SiC & GaN technology?

Current and Future Roadmap of GaN on SiC and GaN on GaN Devices?

What are the features and technology offered by vendors as their USP?

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Ready to talk to us about the challenges facing your business?

Leverage the potential of the Future.

Ready to talk to us about the

challenges facing your business?

Leverage the potential of the Future.